长春师范大学张有地教授联合吉林大学王同辉教授、安徽大学蒋青青教授、南昌大学陈义旺教授、上海交通大学刘锋教授、中国科学院化学所李永舫院士等国内外顶尖团队，在有机光伏材料与器件领域取得里程碑式突破。相关成果以 “Ultra‐High Dielectric Acceptor Enables 21% Efficiency and Thickness‐Insensitive Organic Solar Cells” 为题，正式发表于材料科学国际顶级期刊 《Advanced Materials》（影响因子 26.8，中科院一区 TOP），为有机太阳能电池高效化、规模化、产业化提供关键科学支撑与技术方案。
有机太阳能电池（OSCs）凭借柔性、半透明、可溶液加工、适合大面积印刷制备等独特优势，被视为下一代颠覆性光伏技术。但传统有机材料介电常数普遍偏低（εᵣ≈3–5），导致激子结合能高、电荷复合严重、器件效率与厚度稳定性难以兼顾，成为制约产业化的核心瓶颈。
针对这一领域性难题，联合团队提出介电工程创新策略：通过分子侧链精准修饰，在经典受体 L8BO 中引入二甲醚极性单元，首次设计并合成新型超高介电常数受体 L8BOFO。实验与理论计算证实，该材料介电常数由 4.57 大幅提升至7.41，偶极矩显著增强，为激子高效解离与电荷稳定传输奠定坚实基础。
研究团队将微量 L8BOFO（仅 0.5 wt%）引入 PM6:L8BO 二元体系，构建高性能三元有机太阳能电池，实现光电转换效率 PCE 高达 21.0%，经权威机构认证效率达20.43%，开路电压、短路电流密度、填充因子三大核心参数协同提升，能量损失显著降低，处于国际领先水平。
更为重要的是，该器件展现出国际顶尖的厚度不敏感特性：当活性层厚度从标准 110 nm 增至工业印刷适用的 300 nm 厚膜时，电池仍保持 19.1% 高效率之一，创下目前 300 nm 厚膜有机太阳能电池全球最高效率纪录，彻底破解厚膜器件效率暴跌难题，为卷对卷印刷、大面积组件制备扫清关键障碍。
通过飞秒瞬态吸收、GIWAXS、分子动力学模拟等系统表征，团队首次清晰揭示：超高介电受体可增强介电屏蔽效应、降低激子结合能、加速激子解离、优化分子堆积与垂直相分布、抑制非辐射复合，从物理机制层面建立 “分子结构 — 介电性能 — 器件性能” 的构效关系，为新一代高效厚膜光伏材料设计提供全新范式。
成果不仅将有机太阳能电池效率推至新高度，更以厚度不敏感这一核心突破，大幅降低工业化制备精度要求，显著提升印刷制程容错率与良率，有力推动有机光伏从实验室走向实际应用，为我国新能源材料领域抢占国际制高点提供重要支撑。
Figure 1. Molecular structures and physicochemical properties of the photovoltaic materials. a, Chemical structures of PM6, L8-BO, and L8-BO-FO. b, Frequency-dependent εr of the L8-BO and L8-BO-FO materials. c, Normalized UV-vis absorption spectra of PM6, L8-BO, and L8-BO-FO in solid films. d, Energy levels of PM6, L8-BO, and L8-BO-FO.
Figure 2. Photovoltaic performance of the OSCs. a, J-V curves of the binary and ternary OSCs with different doping concentration of L8-BO-FO. b, Statistical PCE variations with the change of L8-BO-FO doping ratios. c, Certified J-V and power density curves based on the optimal PM6:L8-BO:L8-BO-FO device, obtained from SCM. d, EQE curves of the related binary and ternary OSCs. e, The detailed parameters for the binary and optimal ternary devices. f, EQEEL curves of the binary and optimal ternary OSCs. g, normalized energetic distributions of the CT states, fitted with Gaussian functions; and h, Non-radiative recombination rates, knr; and i, non-radiative voltage losses, ΔVnr, as a function of the considered quantum-mechanical component of the reorganization energy, λqm, for the MD-simulated PM6:L8-BO and PM6:L8-BO:L8-BO-FO blends.
aJSC,cal represents the integrated current density obtained from EQE spectra; bThe average PCE values were obtained from 10 independent cells; cThe certified PCE by South China National Center of Metrology Guangdong Institute of Metrology.
Figure 3. Device physics of the OSCs. a-b, Color plots of the TA spectra of PM6:L8-BO (a) and PM6:L8-BO:L8-BO-FO blend films. c, Comparison of the hole-transfer kinetics for the corresponding blends. d, Characteristic curves of the photocurrent current density versus effective voltage (Jph-Veff). e, Mobilities of the devices obtained from SCLC measurement and photo-CELIV measurement. f, Impedance spectroscopy results of the related devices. g, Normalized TPC data for the corresponding devices. h, Dependence of JSC on the light intensity of the related devices. i, Normalized TPV data of the related devices.
Figure 4. Morphology characterizations of binary and ternary blend films. (a-c) AFM (2 × 2 µm2) height images of the PM6:L8-BO (a), PM6:L8-BO-FO (b) and PM6:L8-BO:L8-BO-FO blend films. (d-f) 2D-GIWAXS patterns of the PM6:L8-BO (d), PM6:L8-BO-FO (e) and PM6:L8-BO:L8-BO-FO (f) blend films. (g) The in-plane and out-of-plane line cut profiles of the investigated blend films. (h) 1D-GISAXS line-cut profiles of the relevant blend films. (i-k) The RDF functions for PM6_PM6, PM6_L8-BO and L8-BO_L8-BO in MD-simulated PM6:L8-BO and PM6:L8-BO:L8-BO-FO blends.
Figure 5. Comparison of thick-film OSCs for the binary and ternary devices. a, J-V curves of the binary and ternary OSCs with 300 nm thickness. b, The PCEs of the binary and ternary devices with 110 and 300 nm thickness. c, Summary of the PCE versus active layer thickness for different systems. d-f, Time-evolution contour plots of UV–vis absorption spectra (d), Time evolution of peak positions and intensities of donors and acceptors (e) and Film-depth dependent component distribution profiles (f) for 300 nm-thick binary films. g-i, Time-evolution contour plots of UV–vis absorption spectra (g), Time evolution of peak positions and intensities of donors and acceptors (h) and Film-depth dependent component distribution profiles (i) for 300 nm-thick ternary films.
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说明：本文仅代表作者个人观点，旨在第一时间介绍和宣传有机光电领域的研究进展。由于水平有限，如有错误之处，烦请各位读者联系指正。
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